Process for hardening active electronic components against ionizing radiations, and hardened components of large dimensions
US5397735A · kind A · utility
8Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1990 |
| Grant date | Mar 14, 1995 |
| Priority date | — |
| Expiry date | Jul 27, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to the "hardening" (resistance to ionizing radiations) of MOS-type components. In order to avoid the effects of these radiations (creation of electron-hole pairs), there is deposited on a substrate (1) of monocrystalline Si a layer of YSZ (2), and then a thin layer of monocrystalline Si (3). The other steps of production of the components are the same as conventional.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.