Method for manufacturing a semiconductor device
US5399236A · kind A · utility
16Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1993 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Jul 6, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device including the steps of forming a photoresist pattern on a metal layer and forming a wiring by etching a metal composed of aluminum or aluminum alloy with plasma including chlorine and eliminating said photoresist pattern while simultaneously eliminating residual chlorine on the wiring by adding alkyl ketone or alkyl ether in an oxygen plasma ash chamber. The present invention can provide a method for manufacturing a semiconductor device, which can eliminate residual chlorine and a photoresist pattern by adding alkyl ketone or alkyl ether so that wiring corrosion may be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.