Method of fabricating a silicon carbide vertical MOSFET and device
US5399515A · kind A · utility
35Cited by
8References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1993 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Jul 12, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
A silicon carbide LOCOS vertical MOSFET formed on a silicon carbide substrate with portions of epitaxial layers defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. Because of the low diffusion rate in silicon carbide, the LOCOS operation can be performed after the doped epitaxial layers are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.