Method of providing an ohmic type contact on p-type Zn(S)Se
US5399524A · kind A · utility
0Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1993 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Oct 7, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/823
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of providing an improved ohmic contact on an p-type ZnSe or ZnSSe layer provided on a substrate comprising immersing the layer in a Hg bath heated to a temperature in excess of 200.degree. C. for more than two hours.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.