Plasma flood system for the reduction of charging of wafers during ion implantation
US5399871A · kind A · utility
44Cited by
7References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 1994 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | May 16, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma flood system for use in the implantation of ions in a semiconductor substrate comprising a plasma and low energy electron source for developing a plasma containing low energy electrons for magnetic field enhanced transmission to a negatively biased, magnetic field assisted electron confinement tube and into an ion beam flowing axially through the tube to the semiconductor substrate for self regulating and neutralizing positive charges on the surface of the substrate without causing significant negative charging of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.