Modulation doped field effect transistor
US5399887A · kind A · utility
25Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 1994 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | May 3, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/471
Abstract
A modulation doped field effect transistor (10) is formed to have a drain (28, 12, 11) that is vertically displaced from the source (16, 17) and channel (20, 21) regions. The transistor (10) has the source (16, 17), channel (20, 21) and a portion of the drain (28) arranged laterally so that current (27) flows from the source (16, 17) laterally to the drain (28, 12, 11). A heterojunction layer (18) on the channel region (20, 21) facilitates forming a two dimensional electron gas in the channel (20, 21) region which provides the transistor (10) with a high transconductance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.