Diode protected semiconductor device
US5399893A · kind A · utility
4Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1993 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Aug 24, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
A diode protected semiconductor device appropriate for the output of a radio frequency amplifier, which can withstand substantial power reflection due to output impedance mismatch, is provided. The device may be implemented monolithically, in the form of a field effect transistor (FET) (14) having a back to back diode pair (17) connecting the drain (18) to the source (19). The FET comprises multiple transistor portions (28) coupled together. The diode pair comprises corresponding diode pair portions (37) coupled together. The configuration provides easy integration of the diode pair (17) into typical FET structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.