Index-guided laser on grooved (001) substrate
US5400356A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1994 |
| Grant date | Mar 21, 1995 |
| Priority date | — |
| Expiry date | Jun 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An index-guided semiconductor laser having a grooved waveguide which uses the optical confinement resulting from the bandgap difference between two phases of OMVPE formed AlGaInP, and in which the higher bandgap phase occurs with AlGaInP grown on substrates orientated at angles less than 55 degrees with respect to the (001) plane. The device is fabricated on a (100) orientated substrate having an etched groove. By fabricating the sidewalls with an angle of between 5 degrees and 50 degrees with respect to the (100) plane of the substrate, composition differences between the (100) stripe center and the grooved sidewall are minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.