Method for forming a ceramic oxide capacitor having barrier layers

US5401680A · kind A · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Norman E. Abt · Burlingame, US
• Reza Moazzami · Austin, US
• Yoav Nissan-Cohen · Zichron Ya'akov, IL

Key dates

• Filing date: Feb 18, 1992
• Grant date: Mar 28, 1995
• Expiry date: Feb 18, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

An electrical ceramic oxide capacitor utilizable in an integrated circuit memory device, and a method for making same is presented. A transistor is fabricated on a semiconductor substrate according to conventional techniques. A diffusion barrier is deposited over the transistor to protect it from subsequent process steps. Metal contacts are formed to contact the active transistor regions in the substrate, and additional barriers are formed to insulate the metal contacts. In a vertical embodiment, the barriers above the metal contacts can serve as bottom electrodes for the capacitor. In a lateral embodiment, the barriers on the side of the metal contacts serve as electrodes for the capacitor. Electrical ceramic oxide material is deposited between the electrode plates.