Reza Moazzami
11Patents
11h-index
13Co-inventors
61Inventor score
Filing activity: Jan 16, 1991 → Jun 14, 1996
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5324683A | Method of forming a semiconductor structure having an air region | Emerging Cross-Sectional Technologies | 505 | Expired |
| US5510645A | Semiconductor structure having an air region and method of forming the semiconductor structure | Emerging Cross-Sectional Technologies | 162 | Expired |
| US5270967A | Refreshing ferroelectric capacitors | Physics | 117 | Expired |
| US5510651A | Semiconductor device having a reducing/oxidizing conductive material | Electricity | 116 | Expired |
| US5401680A | Method for forming a ceramic oxide capacitor having barrier layers | Electricity | 68 | Expired |
| US5407855A | Process for forming a semiconductor device having a reducing/oxidizing conductive material | Electricity | 61 | Expired |
| US5262982A | Nondestructive reading of a ferroelectric capacitor | Physics | 56 | Expired |
| US5696394A | Capacitor having a metal-oxide dielectric | Electricity | 47 | Expired |
| US5768182A | Ferroelectric nonvolatile dynamic random access memory device | Electricity | 39 | Expired |
| US5583068A | Process for forming a capacitor having a metal-oxide dielectric | Electricity | 31 | Expired |
| US5543644A | High density electrical ceramic oxide capacitor | Electricity | 16 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.