Plasma treating method using hydrogen gas
US5403436A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 1994 |
| Grant date | Apr 4, 1995 |
| Priority date | — |
| Expiry date | Jul 11, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma treating method subjects an object surface to a plasma treating within a chamber. First, first and second gasses are supplied into the chamber, where the first gas includes hydrogen molecules as a main component, the second gas includes a quantity of hydrogen less than that included in the first gas and is selected from a group of materials consisting of organic compounds and inorganic compounds, the organic compounds include hydrogen and oxygen and the inorganic compounds include hydrogen. Second, plasma of a mixed gas which is made up of the first and second gasses is generated within the chamber to subject the object surface to the plasma treating. Preferably, the second gas is water vapor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.