Vapor-phase growth method for forming S.sub.2 O.sub.2 films
US5403630A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1993 |
| Grant date | Apr 4, 1995 |
| Priority date | — |
| Expiry date | Oct 27, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/452
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vapor-phase growth method comprising the steps of introducing a silicon-containing gas and ozone into a reaction vessel containing a sample, and introducing excited oxygen obtained by exciting an oxygen gas or an oxygen-containing gas, into the reaction vessel at the same the as, before, or after the silicon-containing gas and the ozone are introduced into the reaction vessel. The silicon-containing gas and the ozone react, forming an intermediate product which can readily condense. The intermediate product reacts with the excited oxygen, thereby forming a thin insulating film which excels in step coverage and has good insulating property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.