Method of making a HgCdTe thin film transistor

US5403760A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Richard A. Schiebel · Dallas, US
• Michael A. Kinch · Dallas, US
• Roland J. Koestner · Richardson, US

Key dates

• Filing date: Nov 15, 1993
• Grant date: Apr 4, 1995
• Expiry date: Nov 15, 2013

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/139

Abstract

Group II-VI thin film transistors, a method of making same and a monolithic device containing a detector array as well as transistors coupled thereto wherein, according to a first embodiment, there is provided a group II-VI insulating substrate, a doped layer of a group II-VI semiconductor material disposed over the substrate, an insulating gate region disposed over the doped layer, a pair of spaced contacts on the doped layer providing source and drain contacts, a gate contact disposed over the insulating gate region, an insulating layer disposed over exposed regions of the substrate, doped layer, insulating gate region and contacts and metallization disposed on the insulating layer and extending through the insulating layer to the contacts. The thickness of the doped layer is less than the maximum depletion region thickness thereof. In accordance with a second embodiment, there is provided a group II-VI insulating substrate, a first conductive doped group II-VI semiconductor layer disposed over the substrate, a second doped group II-VI layer disposed over the first layer and forming a Schottky barrier therewith, an insulating layer disposed over exposed regions of the substrate, …