Method of making semiconductor devices and techniques for controlled optical confinement
US5403775A · kind A · utility
35Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1994 |
| Grant date | Apr 4, 1995 |
| Priority date | — |
| Expiry date | Jun 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4068
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure is directed to improved techniques and devices employing an aluminum-bearing III-V semiconductor material and a native oxide of aluminum that is formed in the semiconductor material. Effective optical confinement, tailored to obtain desired operating conditions, can be achieved with a thick native oxide of aluminum that extends through at least one-third of the thickness of the aluminum-bearing layer in which the native oxide is formed. The resultant lateral index step can be made quite large and employed for devices such as ring lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.