Fred A. Kish, Jr.
144Patents
38h-index
104Co-inventors
93Inventor score
Filing activity: Mar 30, 1992 → Nov 13, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5779924A | Ordered interface texturing for a light emitting device | Electricity | 412 | Expired |
| US5376580A | Wafer bonding of light emitting diode layers | Electricity | 336 | Expired |
| US6784463B2 | III-Phospide and III-Arsenide flip chip light-emitting devices | Electricity | 299 | Expired |
| US5793062A | Transparent substrate light emitting diodes with directed light output | Electricity | 279 | Expired |
| US6800500B2 | III-nitride light emitting devices fabricated by substrate removal | Electricity | 248 | Expired |
| US6307218A | Electrode structures for light emitting devices | Electricity | 198 | Expired |
| US6486499B1 | III-nitride light-emitting device with increased light generating capability | Electricity | 185 | Expired |
| US6229160A | Light extraction from a semiconductor light-emitting device via chip shaping | Electricity | 153 | Expired |
| US6222207A | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip | Electricity | 152 | Expired |
| US5502316A | Wafer bonding of light emitting diode layers | Electricity | 149 | Expired |
| US6514782B1 | Method of making a III-nitride light-emitting device with increased light generating capability | Electricity | 139 | Expired |
| US6320206A | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks | Emerging Cross-Sectional Technologies | 122 | Expired |
| US6420199B1 | Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks | Emerging Cross-Sectional Technologies | 115 | Expired |
| US5917202A | Highly reflective contacts for light emitting semiconductor devices | Electricity | 104 | Expired |
| US7053344B1 | Self regulating flexible heater | Electricity | 88 | Expired |
| US6521914B2 | III-Nitride Light-emitting device with increased light generating capability | Electricity | 84 | Expired |
| US6015719A | Transparent substrate light emitting diodes with directed light output | Electricity | 84 | Expired |
| US5724376A | Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding | Electricity | 78 | Expired |
| US7885492B2 | Transmitter photonic integrated circuit (TxPIC) chips | Electricity | 77 | Active |
| US5661316A | Method for bonding compound semiconductor wafers to create an ohmic interface | Electricity | 75 | Expired |
| US6570190B2 | LED having angled sides for increased side light extraction | Electricity | 72 | Expired |
| US6323063A | Forming LED having angled sides for increased side light extraction | Electricity | 72 | Expired |
| US5837561A | Fabrication of transparent substrate vertical cavity surface emitting lasers by semiconductor wafer bonding | Electricity | 69 | Expired |
| US6593160B2 | Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power led chip | Electricity | 66 | Expired |
| US7268371B2 | Light extraction from a semiconductor light emitting device via chip shaping | Electricity | 66 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.