Ion implantation apparatus
US5404017A · kind A · utility
7Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 1993 |
| Grant date | Apr 4, 1995 |
| Priority date | — |
| Expiry date | Jul 1, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0822
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation apparatus is intended to perform the ion implantation for the desired surface of a target irrespective of the surface geometry thereof, and to simplify the structure. The apparatus includes a vacuum chamber, and a plurality of arc ion sources for emitting ion beams on the surface of the target disposed within the vacuum chamber. A plurality of arc ion source mounting openings are formed on the vacuum chamber. One or more of arc ion sources necessary for emitting ion beams on the desired surface of the target are airtightly mounted on the openings opposed to the above surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.