Surface emission type semiconductor laser
US5404369A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1994 |
| Grant date | Apr 4, 1995 |
| Priority date | — |
| Expiry date | Apr 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4068
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portions. "Lattice mismatch ratio" between the II-VI group compound semiconductor epitaxial layer and the column-like portions is no more than 0.2%, or more preferably no more than 0.16%. The II-VI group compound semiconductor layer is formed from an adduct consisting of II group organometallic compound and VI group organometallic compound and a VI group hydride by the use of a chemical vapor deposition. If a plurality of column-like portions are to be formed by a separation groove, these column-like portions are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.