Method of making large area single crystalline diamond films
US5404835A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 8, 1994 |
| Grant date | Apr 11, 1995 |
| Priority date | — |
| Expiry date | Nov 8, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing a large single crystalline diamond film, in which a nickel substrate is disposed within a diamond growth chamber. After air has been evacuated from the chamber and the substrate has been heated to a temperature exceeding 1145 Celsius, atomic hydrogen is continuously generated from hydrogen gas supplied to the chamber and accelerated toward the substrate, implanting hydrogen atoms in the top substrate surface and converting it to a liquid film of nickel hydride. Then one of two layers of diamond particles of two to three nanometer cross section is deposited on the liquid nickel hydride film, whereby the diamond particles arrange themselves on the liquid nickel hydride film to their lowest free energy state, forming a nascent contiguous single-crystalline diamond film. Thereafter diamond is homoepitaxially grown on the nascent contiguous single-crystalline diamond film to the desired thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.