High growth rate plasma diamond deposition process and method of controlling same
US5405645A · kind A · utility
14Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 1993 |
| Grant date | Apr 11, 1995 |
| Priority date | — |
| Expiry date | Jul 28, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing diamond on a substrate using a microwave plasma generator including providing carbon, hydrogen and oxygen in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma with the C.sub.2 emission at 5165 Angstroms (.ANG.) at a level of from 0.5 to 50 times the atomic hydrogen alpha emission level at 6563 .ANG., for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.