Lawrence P. Bourget
6Patents
6h-index
13Co-inventors
52Inventor score
Filing activity: Jun 10, 1993 → Jun 23, 1997
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6051114A | Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition | Electricity | 215 | Expired |
| US5792522A | High density plasma physical vapor deposition | Electricity | 52 | Expired |
| US5688382A | Microwave plasma deposition source and method of filling high aspect-ratio features on a substrate | Electricity | 40 | Expired |
| US5279866A | Process for depositing wear-resistant coatings | Chemistry; Metallurgy | 16 | Expired |
| US5405645A | High growth rate plasma diamond deposition process and method of controlling same | Chemistry; Metallurgy | 14 | Expired |
| US5518759A | High growth rate plasma diamond deposition process and method of controlling same | Chemistry; Metallurgy | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.