Semiconductor hybrids and method of making same
US5405807A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1993 |
| Grant date | Apr 11, 1995 |
| Priority date | — |
| Expiry date | Mar 31, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a hybrid semiconductor device and the device comprising providing a semiconductor substrate having electrical devices therein, providing a first resilient layer of electrically insulating material over the substrate which can be disposed directly onto the substrate with a substantially planar exposed surface, providing a second resilient layer of electrically insulating material over the first resilient layer which can be disposed directly onto the first layer with a substantially planar exposed surface, the second layer having a relatively resilient state and a rigid state, providing resilient standoff from the third resilient layer at spaced locations on the second layer by removing predetermined portions of the third layer, securing a semiconductor superstrate to the semiconductor device, forming electrical devices on the superstrate, and then connecting the electrical devices on the superstrate to the electrical devices on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.