Dopant implant for conductive charge leakage layer for use with voltage contrast
US5406116A · kind A · utility
7Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1993 |
| Grant date | Apr 11, 1995 |
| Priority date | — |
| Expiry date | Dec 6, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A layer of dopant is implanted in the passivation of a semiconductor die to facilitate testing of the die by a scanning electron microscope voltage contrast system. The layer of dopant is capacitively coupled to circuits under the passivation and is coupled to ground to allow charge to bleed to ground through a high resistivity path. The resistivity is low enough to allow E-beam charge bleed off, but not bleed off of higher frequency capacitive coupled signals. The disclosure is also applicable to photo generated electron voltage contrast.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.