Method to prepare hemi-spherical grain (HSG) silicon using a fluorine based gas mixture and high vacuum anneal
US5407534A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 10, 1993 |
| Grant date | Apr 18, 1995 |
| Priority date | — |
| Expiry date | Dec 10, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention develops a process for forming hemi-spherical grained silicon storage capacitor plates by the steps of: forming a silicon layer over a pair of neighboring parallel conductive lines, the silicon layer making contact to an underlying conductive region; patterning the silicon layer to form individual silicon capacitor plates; exposing the silicon capacitor plates to a fluorine based gas mixture during an high vacuum annealing period, thereby transforming the silicon capacitor plates into the semi-spherical grained silicon capacitor plates; conductively doping the hemispherical grained silicon capacitor plates; forming a capacitor dielectric layer adjacent and coextensive the semispherical grained silicon capacitor plates; and forming a second conductive silicon layer superjacent and coextensive the capacitor dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.