Process for forming a semiconductor device having a reducing/oxidizing conductive material
US5407855A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1993 |
| Grant date | Apr 18, 1995 |
| Priority date | — |
| Expiry date | Jun 7, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention includes a semiconductor device having a layer including an elemental metal and its conductive metal oxide, wherein the layer is capable being oxidized or reduced preferentially to an adjacent region of the device. The present invention also includes processes for forming the devices. Substrate regions, silicon-containing layers, dielectric layers, electrodes, barrier layers, contact and via plugs, interconnects, and ferroelectric capacitors may be protected by and/or formed with the layer. Examples of elemental metals and their conductive metal oxides that may be used with the present invention are: ruthenium and ruthenium dioxide, rhenium and rhenium dioxide, iridium and iridium dioxide, osmium and osmium tetraoxide, or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.