Scanning electron microscope and method for production of semiconductor device by using the same
US5412210A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1993 |
| Grant date | May 2, 1995 |
| Priority date | — |
| Expiry date | Dec 2, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/281
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A technique for displaying a scanned specimen image permits non-destructive observation of a surface structure having large or precipitous unevenness, an internal structure of a specimen or a specific structure of a defect or foreign matter, which non-destructive observation has hitherto been considered to be difficult to achieve. The technique can be applied to inspection and measurement so as to economically provide devices and parts of high quality and high reliability. Thus, secondary information such as secondary electrons resulting from interaction of primary information with a specimen, the primary information being generated as a result of interaction of a scanning electron beam with the specimen, is utilized as an image signal to form an image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.