Method of making a silicon-based device comprising surface plasma cleaning
US5413954A · kind A · utility
22Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1992 |
| Grant date | May 9, 1995 |
| Priority date | — |
| Expiry date | Nov 10, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A novel vapor phase Si cleaning process comprises simultaneous exposure of the Si surface to a flux of neutral atomic hydrogen and to a flux of ionized particles. The former flux is substantially derived from a plasma, typically a microwave plasma, that is spaced apart from a second plasma, typically a RF plasma, from which the ionized particles are derived. The novel method can be implemented at relatively low cost and facilitates adjustment of the ratio between the two fluxes to result in optimal removal of, e.g., native oxide from the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.