Method of bonding silicon wafers at temperatures below 500 degrees centigrade for sensor applications
US5413955A · kind A · utility
32Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1993 |
| Grant date | May 9, 1995 |
| Priority date | — |
| Expiry date | Dec 21, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A process for silicon wafer-to-wafer bonding at temperatures lower than 500.degree. C. has been developed. It consists of (1) treating the cleaned surfaces to make them smooth and hydrophilic, (2) initiating the bond by making intimate contact between wafers and (3) enhancing the bond strength at elevated temperatures. This bonding process can be applied to sensor packaging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.