Method of manufacturing semiconductor devices
US5413967A · kind A · utility
271Cited by
9References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 1994 |
| Grant date | May 9, 1995 |
| Priority date | — |
| Expiry date | May 3, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An organic silane compound gas and an oxidizing gas are introduced into a reaction vessel from each gas source. Further a gas containing at least one kind of halogen, for example carbon tetrafluoride, is decomposed into halogen radicals, etc., by microwave discharge, and introduced into the reaction vessel. Reaction occurs between the gases, resulting in silicon oxide films being formed on substrates in the reaction vessel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.