Heterojunction bipolar transistor
US5414273A · kind A · utility
14Cited by
1References
10Claims
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Assignee
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Key dates
| Filing date | Feb 28, 1994 |
| Grant date | May 9, 1995 |
| Priority date | — |
| Expiry date | Feb 28, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/761
Abstract
A heterojunction bipolar transistor includes a multiquantum barrier structure as part of the collector and contacting the base. The MQB has an energy band structure in which the height of the effective potential barrier of the MQB increases in steps from the base into the collector. Therefore, an electric field in the collector in the vicinity of the base-collector interface is relaxed and intervalley scattering of electrons is suppressed whereby a reduction in electron mobility due to the intervalley scattering is suppressed, reducing transit time of electrons in the collector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.