IGBT with self-aligning cathode pattern and method for producing it
US5414290A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 7, 1994 |
| Grant date | May 9, 1995 |
| Priority date | — |
| Expiry date | Apr 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
An insulated-gate bipolar transistor (IGBT) is specified, the collector (7) and source regions (8) of which can be produced by means of a self-aligning method. This provides an IGBT which is distinguished by a homogeneous turn-off current distribution. For this purpose, the width W of the source regions (8) is selected to be so small that holes can flow laterally into the surrounding collector region. In this connection it must be ensured that the voltage drop across the PN junction of the source regions and collector regions remains below the inherent forward voltage at any time. In consequence, the IGBT according to the invention is particularly insensitive to latch-up.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.