High temperature interconnect system for an integrated circuit
US5414301A · kind A · utility
31Cited by
15References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 16, 1994 |
| Grant date | May 9, 1995 |
| Priority date | — |
| Expiry date | Feb 16, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device is provided with an electrical interconnect system which is stable at high temperatures. The interconnect system employs refractory metal compounds which are electrically conductive, which form stable couples with silicon and compounds thereof, and which remain stable at temperatures exceeding approximately 500.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.