Process for fabricating storage capacitor structures using CVD tin on hemispherical grain silicon
US5418180A · kind A · utility
179Cited by
10References
39Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 14, 1994 |
| Grant date | May 23, 1995 |
| Priority date | — |
| Expiry date | Jun 14, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/31
Abstract
An embodiment of the present invention depicts a storage capacitor comprising: a bottom plate structure having a hemispherical grain silicon surface; a titanium nitride layer adjacent and coextensive the hemispherical grain silicon; an insulating layer adjacent and coextensive the titanium nitride layer; and a top plate structure comprising conductively doped polysilicon layer superjacent and coextensive the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.