Semiconductor device capable of previously evaluating characteristics of power output element
US5418383A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1993 |
| Grant date | May 23, 1995 |
| Priority date | — |
| Expiry date | Oct 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
At least one power output element made of an insulated gate semiconductor element, a surge protection element for an input electrode of the power output element, and a circuit element block for controlling the power output element, are formed on the same semiconductor substrate. A predetermined electrode of the power output element and one end of the surge protection element are connected to each other. In this state, first, second, and third electrode wiring layers are connected to an output terminal of the circuit element block, the other end of the surge protection element, and the input electrode of the power output element, respectively, and the first to third electrode wiring layers are formed separately from one another. In order to connect the first to third electrode wiring layers to each other, a fourth electrode wiring layer is formed thereon. Thus, a characteristic of the power output element is previously evaluated before the fourth electrode wiring layer is formed, using at least the third electrode wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.