Method for forming a conductive interconnect in an integrated circuit
US5420072A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1994 |
| Grant date | May 30, 1995 |
| Priority date | — |
| Expiry date | Feb 4, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conformal titanium nitride film having a preferred <111> crystal orientation is formed by chemically vapor depositing the film in two separate steps. In the first deposition step a titanium nitride layer (22) having poor step coverage and a preferred <111> crystal orientation is formed. In the second deposition step a second conformal layer of titanium nitride (24) is insitu deposited onto the first titanium nitride layer (22), wherein during the deposition the first titanium nitride layer (22) acts as a crystallographic seed layer for the second titanium nitride layer (24). As a result, a titanium nitride layer exhibiting a preferred <111> crystal orientation and good step coverage is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.