Silicon-containing positive resist and use in multilayer metal structures
US5422223A · kind A · utility
33Cited by
5References
4Claims
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Key dates
| Filing date | Jul 13, 1994 |
| Grant date | Jun 6, 1995 |
| Priority date | — |
| Expiry date | Jul 13, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0757
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Photosensitive silicon-containing resist compositions comprising hydroxyphenylsilsesquioxanes and siloxanes partially estersified with diazonaphthoquinone sulfonyloxy groups for imageable O.sub.2 RIE barrier films. Methods for forming image patterns on substrates using these photosensitive silicon-containing resist compositions are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.