Method of manufacturing a precision integrated resistor
US5422298A · kind A · utility
7Cited by
6References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 23, 1992 |
| Grant date | Jun 6, 1995 |
| Priority date | — |
| Expiry date | Sep 23, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/025
Abstract
A precision resistor, on a semiconductor substrate, formed by using two polysilicon stripes to mask the oxide etch (and ion implantation) which forms a third conductive stripe in a moat (active) area of the substrate. The sheet resistance R.sub.p and a patterned width W.sub.p of the polysilicon stripes and the patterned width W.sub.M and sheet resistance R.sub.M, are related as R.sub.p W.sub.p =2R.sub.M W.sub.M. By connecting the three stripes in parallel, a net resistance value is achieved which is independent of linewidth variation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.