Interband single-electron tunnel transistor and integrated circuit
US5422496A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1993 |
| Grant date | Jun 6, 1995 |
| Priority date | — |
| Expiry date | Sep 8, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/937
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An interband single-electron tunnel/transistor utilizes an interband single-electron tunneling phenomenon between a valence band and a conduction band through a p-n junction. The transistor includes the combination of microcapacities as fundamental constituent elements each formed by joining a p-type semiconductor material doped with an impurity in the degree of concentration with which a Fermi level overlaps a valence band and an n-type semiconductor material doped with an impurity in the degree of concentration with which the Fermi level overlaps a conduction band. The microcapacity includes a p-n junction having a junction area with which interband electron tunneling is inhibited due to Coulomb blockade.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.