MOS transistor with non-uniform channel dopant profile
US5422510A · kind A · utility
9Cited by
4References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 30, 1992 |
| Grant date | Jun 6, 1995 |
| Priority date | — |
| Expiry date | Oct 30, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
Abstract
An MOS transistor wherein the channel between the source and drain is formed with two regions having different dopant concentrations. The region adjacent the source has a normal concentration, while that adjacent the drain has a reduced dopant concentration. This reduces the degrading effects of hot carrier injection, thereby extending the life of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.