Dry etching process for semiconductor
US5423941A · kind A · utility
49Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1993 |
| Grant date | Jun 13, 1995 |
| Priority date | — |
| Expiry date | Nov 17, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming deep trenches on a surface of a semiconductor substrate by forming a mask on the surface of the semiconductor, which prescribes the position of the trenches; and then dry etching the semiconductor surface using a gas mixture comprising (1) an etchant, bromine containing, gas which etches the semiconductor surface to form trenches, (2) a cleaning, halogen containing, gas which evaporates the residue formed by the etching; and (3) a reactive gas capable of reacting with material formed during the etching and capable of decreasing the wastage of the mask by the etchant gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.