Yoshikazu Sakano
5Patents
5h-index
11Co-inventors
52Inventor score
Filing activity: Nov 17, 1993 → Feb 23, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6521538B2 | Method of forming a trench with a rounded bottom in a semiconductor device | Electricity | 84 | Expired |
| US6090718A | Dry etching method for semiconductor substrate | Emerging Cross-Sectional Technologies | 58 | Expired |
| US5423941A | Dry etching process for semiconductor | Electricity | 49 | Expired |
| US5522966A | Dry etching process for semiconductor | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5871659A | Dry etching process for semiconductor | Electricity | 18 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.