Patent · US Expired

Method of producing semiconductor device having radiation part made of resin containing insulator powders

US5424251A · kind A · utility

24Cited by
12References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 14, 1993
Grant dateJun 13, 1995
Priority date
Expiry dateSep 14, 2013

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49121
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a stage having top and bottom surfaces, a semiconductor element which is mounted on the top surface of the stage, a package part which is made of a first resin and encapsulates the semiconductor element so that a surface of the package part and the bottom surface of the stage lie on substantially the same plane, and a radiation part which is made of a second resin and is provided directly on the bottom surface of the stage and the surface of the package part. The second resin includes a filler material selected from a group consisting of metal powders and insulator powders so that a thermal conduction of the second resin is greater than that of the first resin.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.