Crater prevention technique for semiconductor processing
US5424581A · kind A · utility
9Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 1994 |
| Grant date | Jun 13, 1995 |
| Priority date | — |
| Expiry date | Jul 19, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor bond pad prevents cratering by including an etch stop layer which is formed between the field oxide layer and the first dielectric layer to prevent erosion of the field oxide while allowing etching and removal of the first dielectric layer to prevent cratering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.