Continuous or semi-continuous laser ablation method for depositing fluorinated superconducting thin film having basal plane alignment of the unit cells deposited on non-lattice-matched substrates
US5426092A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1992 |
| Grant date | Jun 20, 1995 |
| Priority date | — |
| Expiry date | Jun 25, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/78
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film, high T.sub.c fluorinated, superconducting having a lattice structure differing from the lattice structure of the material substrate, such as sapphire or stainless steel, upon which it is grown. The superconducting material is characterized by basal plane alignment of the unit cells thereof even though the substrate does not possess a perovskite lattice structure. A laser ablation technique is used to evaporate material from a fluorinated pellet of target material to deposit the fluorinated superconducting material on the substrate. The instant invention provides for a low pressure and relatively low temperature method of depositing a superconducting film which is characterized by (1) a minimal number of high angle grain boundaries typically associated with polycrystalline films, and (2) aligned a, b, and c axes of the unit cells thereof so as to provide for enhanced current carrying capacities. Large area, irregularly shaped and rolls of inexpensive substrate material can be uniformly covered by the method described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.