High-frequency semiconductor device including microstrip transmission line
US5426319A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 30, 1993 |
| Grant date | Jun 20, 1995 |
| Priority date | — |
| Expiry date | Apr 30, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a silicon substrate on which a circuit having a predetermined function is formed and a high frequency circuit chip which is mounted on the silicon substrate and operates at high frequencies, and operates with functions of the silicon substrate and the high frequency circuit chip, wherein a thin film tape having a microstrip structure including an insulating film, a signal line on a surface of the insulating film and a grounding layer on a rear surface of the insulating film, is disposed on the silicon substrate, whereby the silicon substrate is electrically connected to the high frequency circuit chip. As a result, a conventional silicon substrate is employed and a production cost is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.