Method for forming a capacitor in a DRAM cell using a rough overlayer of tungsten
US5427974A · kind A · utility
32Cited by
20References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1994 |
| Grant date | Jun 27, 1995 |
| Priority date | — |
| Expiry date | Mar 18, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
In accordance with the invention a rough overlayer, e.g., a tungsten film, is used to define a plurality of pillars in a polysilicon electrode layer. This increases the surface area of the polysilicon electrode and thus increases capacitance of a capacitor incorporating the electrode layer in a DRAM cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.