Field effect transistor
US5428224A · kind A · utility
10Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1993 |
| Grant date | Jun 27, 1995 |
| Priority date | — |
| Expiry date | Oct 28, 2013 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A field effect transistor with improved operation speed and reduced noise includes a drain electrode disposed on a channel layer with a contact layer interposed therebetween, a source electrode, and a gate electrode disposed between the drain and source electrodes. A resonant tunneling diode is disposed between the source electrode and the channel region for supplying hot electrons to the channel layer beneath the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.