High breakdown voltage type semiconductor device
US5428241A · kind A · utility
15Cited by
0References
6Claims
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Assignee
Inventor
Key dates
| Filing date | Jul 12, 1994 |
| Grant date | Jun 27, 1995 |
| Priority date | — |
| Expiry date | Jul 12, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
In a high breakdown voltage type semiconductor device, width W2 of channel region 20 at a corner portion is made wider than width W1 of channel region 20 at a linear portion in a planar pattern of a gate electrode 9. Consequently, the device has high breakdown voltage when it is "OFF" and has low resistance when it is "ON".
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.