Method for constructing semiconductor-on-insulator
US5429955A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1992 |
| Grant date | Jul 4, 1995 |
| Priority date | — |
| Expiry date | Oct 26, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for constructing a semiconductor-on-insulator is provided. A sacrificial layer (12) of a predetermined thickness is first formed on a semiconductor wafer (10) surface. The wafer (10) is then subjected to an ion implantation process to place the ions (16) at predetermined depths below the semiconductor wafer surface. During the implantation process, the sacrificial layer (12) is gradually sputtered away and thereby compensating the gradual outgrowth of the silicon surface due to the volume of the implanted ions (16). A post-implant anneal is performed to allow the ions (16) to react with the semiconductor to form a buried insulating layer (24).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.