Method of manufacturing silicon oxide film containing fluorine
US5429995A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1993 |
| Grant date | Jul 4, 1995 |
| Priority date | — |
| Expiry date | Jul 16, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below: EQU P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A) and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below: EQU D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.E(B)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.