Copper etching
US5431774A · kind A · utility
46Cited by
3References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 19, 1994 |
| Grant date | Jul 11, 1995 |
| Priority date | — |
| Expiry date | Jul 19, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/02
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A dry etch for metals such as copper using .pi.-acids in an energetic environment such as a plasma, laser, or afterglow reactor (102) or by using ligands forming volatiles at low temperature within a pulsed energetic environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.